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     2003 Jul 15 2 NXP Semiconductors Product data sheet Ultra low VF MEGA Schottky barrier rectifier PMEG1020EV FEATURES ? Forward current: 2 A ? Reverse voltage: 10 V ? Ultra low forward voltage ? Ultra small plastic SMD package. APPLICATIONS ? Low voltage rectification ? High efficiency DC/DC conversion ? Switch mode power supply ? Inverse polarity protection ? Low power consumption applications. DESCRIPTION Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection encapsulated in a SOT666 ultra small plastic SMD package. PINNING PIN DESCRIPTION 1 cathode 2 cathode 3 anode 4 anode 5 cathode 6 cathode handbook, halfpage6 123 4 5 1, 2 5, 6 3, 4 MHC310 Fig.1 Simplified outline (SOT666) and symbol. Marking code: F2. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Only valid if pins 3 and 4 are connected in parallel. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage ? 10 V IF continuous forward current Tsp ≤ 55 °C; note 1 ? 2 A IFRM repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.5; note 1 ? 3.2 A IFSM non-repetitive peak forward current tp = 8 ms square wave; note 1 ? 9 A Tstg storage temperature ?65 +150 °C Tj junction temperature ? 150 °C Tamb operating ambient temperature ?65 +150 °C |